Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...
Reexamination Certificate
2005-03-11
2009-02-03
Tran, Thien F (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
In combination with or also constituting light responsive...
C257S098000, C257S099000
Reexamination Certificate
active
07485897
ABSTRACT:
A nitride-based light-emitting device and a method of manufacturing the same. The light-emitting device includes a substrate, and an n-cladding layer, an active layer, a p-cladding layer, a grid cell layer and an ohmic contact layer sequentially formed on the substrate. The grid cell layer has separated, conducting particle type cells with a size of less than 30 micrometers buried in the ohmic contact layer. The nitride-based light-emitting device and the method of manufacturing the same improve the characteristics of ohmic contact on the p-cladding layer, thereby increasing luminous efficiency and life span of the device while simplifying a manufacturing process by omitting an activation process after wafer growth.
REFERENCES:
patent: 5990500 (1999-11-01), Okazaki
patent: 6465808 (2002-10-01), Lin
patent: 2005/0199888 (2005-09-01), Seong et al.
patent: 2005/0218419 (2005-10-01), Okazaki et al.
patent: 1330415 (2002-01-01), None
patent: 1168460 (2002-01-01), None
patent: 2002-003101 (2002-01-01), None
Mensz, P.M., et al., “InxGA1-xN/AlyGa1-yN violet light emitting diodes with reflective p-contacts for high single sided light extraction”, Electronics Letters, Nov. 20, 1997, pp. 2066-2068, vol. 33, No. 24, IEE, NY, USA and Stevenage, England.
Korean Patent Office Notice to Submit Response, dated Dec. 15, 2005, and English translation thereof.
Office Action issued by Chinese Patent Office, dated Oct. 19, 2007, in counterpart Chinese Patent Application No. 2005100685404 and English-language translation thereof.
Kim Kyoung-kook
Leem Dong-seok
Seong Tae-yeong
Song June-o
Buchanan & Ingersoll & Rooney PC
Gwangju Institute of Science and Technology
Samsung Electronics Co,. Ltd.
Tran Thien F
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