Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Having diverse electrical device
Reexamination Certificate
2007-01-04
2009-02-03
Pert, Evan (Department: 2826)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Having diverse electrical device
C438S026000, C438S022000, C438S048000, C438S128000
Reexamination Certificate
active
07485479
ABSTRACT:
Provided are a nitride-based light emitting device and a method of manufacturing the same. The nitride-based light emitting device has a structure in which at least an n-cladding layer, an active layer, and a p-cladding layer are sequentially formed on a substrate. The light emitting device further includes an ohmic contact layer composed of a zinc (Zn)-containing oxide containing a p-type dopant formed on the p-cladding layer. The method of manufacturing the nitride-based light emitting device includes forming an ohmic contact layer composed of Zn-containing oxide containing a p-type dopant on the p-cladding layer, the ohmic contact layer being made and annealing the resultant structure. The nitride-based light emitting device and manufacturing method provide excellent I-V characteristics by improving ohmic contact with a p-cladding layer while significantly enhancing light emission efficiency of the device due to high light transmittance of a transparent electrode.
REFERENCES:
patent: 5065404 (1991-11-01), Okajima et al.
patent: 6040588 (2000-03-01), Koide et al.
patent: 6287947 (2001-09-01), Ludowise et al.
patent: 6583443 (2003-06-01), Chang et al.
patent: 6825502 (2004-11-01), Okazaki et al.
patent: 2003/0209723 (2003-11-01), Sakai
patent: 2004/0113156 (2004-06-01), Tamura et al.
patent: 2005/0121685 (2005-06-01), Seong et al.
patent: 2007/0267646 (2007-11-01), Wierer et al.
patent: 1330416 (2002-01-01), None
patent: 1330416 (2002-01-01), None
patent: 2002-164570 (2002-06-01), None
patent: 2002-164570 (2002-06-01), None
patent: 2002-353499 (2002-12-01), None
Young-Don Ko et al., “Characteristics of ZnO/Si prepared by Zn3P2 diffusion”, Applied Surfaces Science 202, (2002) pp. 266-271, Elsevier Science B.V.
Young-Don Ko et al.: “Characteristics of ZnO/Si prepared by Zn3P2diffusion”, Applied Surfaces Science 202, (2002) pp. 266-271, Elsevier Science B.V.
“Recent Advances in Research on p-Type ZnO”, Journal of Inorganic Materials, Jan. 2003, vol. 18, No. 1, pp. 11-18, China Academic Journal Electronic Publishing House (cited in Chinese Office Action).
Chinese Office Action (with English translation) dated Feb. 9, 2007.
Office Action issued by the Chinese Patent Office in corresponding CN Patent Application No. 200410092115.4, Aug. 24, 2007; and partial English-language translation thereof.
Kim Kyoung-kook
Leem Dong-seok
Seong Tae-yeon
Song June-o
Buchanan & Ingersoll & Rooney PC
Pert Evan
Samsung Electronics Co,. Ltd.
Wilson Scott R
LandOfFree
Nitride-based light emitting device and method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Nitride-based light emitting device and method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nitride-based light emitting device and method of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4100227