Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2004-07-15
2008-12-09
Sefer, Ahmed (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S103000, C257S744000, C257S745000, C257SE33005, C257SE33028, C257SE33064
Reexamination Certificate
active
07462877
ABSTRACT:
A nitride-based light emitting device having a light emitting layer between an N-type clad layer and a P-type clad layer is provided. The light emitting device including: a reflective layer which reflects light emitting from the light emitting layer; and at least one metal layer which is formed between the reflective layer and the P-type clad layer.
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Seong Tae-yeon
Song June-o
Buchanan & Ingersoll & Rooney PC
Gwangju Institute of Science and Technology
Samsung Electronics Co,. Ltd.
Sefer Ahmed
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