Nitride-based light emitting device, and method of...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S103000, C257S744000, C257S745000, C257SE33005, C257SE33028, C257SE33064

Reexamination Certificate

active

07462877

ABSTRACT:
A nitride-based light emitting device having a light emitting layer between an N-type clad layer and a P-type clad layer is provided. The light emitting device including: a reflective layer which reflects light emitting from the light emitting layer; and at least one metal layer which is formed between the reflective layer and the P-type clad layer.

REFERENCES:
patent: 5990500 (1999-11-01), Okazaki
patent: 6693352 (2004-02-01), Huang et al.
patent: 6949773 (2005-09-01), Shin
patent: 6969874 (2005-11-01), Gee et al.
patent: 6989598 (2006-01-01), Song et al.
patent: 7180094 (2007-02-01), Seong et al.
patent: 2002/0014630 (2002-02-01), Okazai et al.
patent: 2002/0036286 (2002-03-01), Ho et al.
patent: 2002/0190260 (2002-12-01), Shen et al.
patent: 2003/0160259 (2003-08-01), Uemura
patent: 2005/0056857 (2005-03-01), Okazaki et al.
patent: 2005/0072968 (2005-04-01), Tsai et al.
patent: 2005/0087753 (2005-04-01), D'Evelyn et al.
patent: 2005/0133799 (2005-06-01), Uemura et al.
patent: 199 21 987 (1999-11-01), None
patent: 1 168 460 (2002-01-01), None
patent: 1 294 028 (2003-03-01), None
patent: 10-135515 (1998-05-01), None
patent: 2002-26392 (2002-01-01), None
patent: 2002-246648 (2002-08-01), None
patent: 1999-0088218 (1999-12-01), None
patent: 01/47038 (2001-06-01), None
Korean Office Action dated Jul. 25, 2005.
European Search Report (in English) issued by the EPO in corresponding European Patent Application No. 04 25 4402.3 on Nov. 14, 2006, The Hague, The Netherlands.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Nitride-based light emitting device, and method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nitride-based light emitting device, and method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nitride-based light emitting device, and method of... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4048998

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.