Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2007-02-20
2007-02-20
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S098000, C257S103000, C257S072000, C257S088000, C257S453000, C257SE21011, C257SE21045
Reexamination Certificate
active
10957704
ABSTRACT:
Provided are a nitride-based light emitting device and a method of manufacturing the same. The nitride-based light emitting device has a structure in which at least an n-cladding layer, an active layer, and a p-cladding layer are sequentially formed on a substrate. The light emitting device further includes an ohmic contact layer composed of a zinc (Zn)-containing oxide containing a p-type dopant formed on the p-cladding layer. The method of manufacturing the nitride-based light emitting device includes forming an ohmic contact layer composed of Zn-containing oxide containing a p-type dopant on the p-cladding layer, the ohmic contact layer being made and annealing the resultant structure. The nitride-based light emitting device and manufacturing method provide excellent I–V characteristics by improving ohmic contact with a p-cladding layer while significantly enhancing light emission efficiency of the device due to high light transmittance of a transparent electrode.
REFERENCES:
patent: 2003/0209723 (2003-11-01), Sakai
patent: 2002-164570 (2002-06-01), None
(IDS reference) Young-Don Ko et al., “Characteristics of ZnO/Si prepared by Zn3P2 diffusion”, Applied Surfaces Science 202, (2002) pp. 266-271, Elsevier Science B.V.
Korean Office Action dated Aug. 30, 2005.
“Young-Don Ko et al.: “Characteristics of ZnO/Si prepared by Zn3P2diffusion”, Applied Surfaces Science 202, (2002) pp. 266-271, Elsevier Science B.V.
Kim Kyoung-kook
Leem Dong-seok
Seong Tae-yeon
Song June-o
Buchanan & Ingersoll & Rooney PC
Flynn Nathan J.
Gwangju Institute of Science and Technology
Samsung Electronics Co,. Ltd.
Wilson Scott R.
LandOfFree
Nitride-based light emitting device and method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Nitride-based light emitting device and method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nitride-based light emitting device and method of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3873323