Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular dopant material
Reexamination Certificate
2007-03-20
2007-03-20
Crane, Sara (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular dopant material
C257S096000, C257S745000, C438S608000, C438S609000
Reexamination Certificate
active
10963725
ABSTRACT:
Provided are a nitride-based light emitting device using a p-type conductive transparent thin film electrode layer and a method of manufacturing the same. The nitride-based light emitting device includes a substrate, and an n-cladding layer, an active layer, a p-cladding layer and an ohmic contact layer sequentially formed on the substrate. The ohmic contact layer is made from a p-type conductive transparent oxide thin film. The nitride-based light emitting device and method of manufacturing the same provide excellent I-V characteristics by improving characteristics of an ohmic contact to a p-cladding layer while enhancing light emission efficiency of the device due to high light transmittance exhibited by a transparent electrode.
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Korean Office Action dated Sep. 30, 2005.
Leem Dong-seok
Seong Tae-yeon
Song June-o
Buchanan & Ingersoll & Rooney PC
Crane Sara
Samsung Electronics Co,. Ltd.
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