Nitride-based light emitting device and manufacturing method...

Details Nitride-based light emitting device and manufacturing method... Nitride-based light emitting device and manufacturing method...

2006-08-09

2008-09-23

Ngo, Ngan (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With housing or contact structure

C257S102000, C257S103000, C257SE33013, C257SE33025, C257SE33026

Reexamination Certificate

active

07427785

ABSTRACT:
A light emitting device according to an exemplary embodiment of the present invention includes: an n-type cladding layer; a p-type cladding layer; an active layer interposed between the n-type cladding layer and the p-type cladding layer; and an ohmic contact layer contacting the p-type cladding layer or the n-type cladding layer and comprising a first film that comprises a transparent conductive zinc oxide having a one-dimensional nano structure, wherein the one-dimensional nano structure is at least one selected from a nano-column, a nano rod, and a nano wire.

REFERENCES:
patent: 7355216 (2008-04-01), Yang et al.
patent: 2004/0262636 (2004-12-01), Yang et al.
patent: 2005/0082543 (2005-04-01), Alizadeh et al.
patent: 2005/0107870 (2005-05-01), Wang et al.
patent: 2007/0248132 (2007-10-01), Kikuchi et al.
patent: 1020050063668 (2005-06-01), None

Affiliated with

Also associated with

Rating

Nitride-based light emitting device and manufacturing method... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nitride-based light emitting device and manufacturing method..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nitride-based light emitting device and manufacturing method... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3991242