Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2007-02-13
2007-02-13
Deo, Duy-Vu N (Department: 1765)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S751000, C257S752000, C257S753000, C257S762000
Reexamination Certificate
active
10753637
ABSTRACT:
A method for forming a composite barrier layer that also functions as an etch stop in a damascene process is disclosed. A SiC layer is deposited on a substrate in a CVD process chamber followed by deposition of a silicon nitride layer to complete the composite barrier layer. The SiC layer exhibits excellent adhesion to a copper layer in the substrate and is formed by a method that avoids reactive Si+4species and thereby prevents CuSiXformation. The silicon nitride layer thickness is sufficient to provide superior barrier capability to metal ions but is kept as thin as possible to minimize the dielectric constant of the composite barrier layer. The composite barrier layer provides excellent resistance to copper oxidation during oxygen ashing steps and enables a copper layer to be fabricated with a lower leakage current than when a conventional silicon nitride barrier layer is employed.
REFERENCES:
patent: 6455417 (2002-09-01), Bao et al.
patent: 6465366 (2002-10-01), Nemani et al.
patent: 6479391 (2002-11-01), Morrow et al.
patent: 6507081 (2003-01-01), Smith et al.
patent: 6570256 (2003-05-01), Conti et al.
patent: 6593653 (2003-07-01), Sundararajan et al.
patent: 6602806 (2003-08-01), Xia et al.
patent: 6693356 (2004-02-01), Jiang et al.
patent: 2002/0140103 (2002-10-01), Kloster et al.
patent: 2003/0071358 (2003-04-01), Yin et al.
patent: 2003/0124836 (2003-07-01), Andideh
patent: 2003/0134499 (2003-07-01), Chen et al.
patent: 2005/0104150 (2005-05-01), Wetzel et al.
patent: 2005/0224908 (2005-10-01), Barth
Cheng Yi-Lung
Wang Ying-Lung
Deo Duy-Vu N
Taiwan Semiconductor Manufacturing Company
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