Nitridation of titanium, for use with tungsten filled contact ho

Details Nitridation of titanium, for use with tungsten filled contact ho Nitridation of titanium, for use with tungsten filled contact ho

1995-10-27

1996-09-03

Fourson, George

Fishing, trapping, and vermin destroying

437192, 437200, 437 26, H01L 2128

Patent

active

055523404

ABSTRACT:
A process has been developed that allows small diameter contact holes to be filled with chemical vapor deposited tungsten, without tungsten peeling from the sides of the contact hole. The process consists of initially depositing an adhesive layer of titanium in the contact hole, followed by a rapid thermal anneal cycle, in an ammonia ambient, for purposes of creating a thin, uniform, barrier layer of titanium nitride. The titanium nitride protects the underlying titanium adhesion layer from the by-products introduced during the tungsten deposition, specifically the evolution of fluorine ions resulting from the decomposition of tungsten hexafluoride.

REFERENCES:
patent: 4994410 (1991-02-01), Sun et al.
patent: 5188979 (1993-02-01), Filipiak
patent: 5286675 (1994-02-01), Chen et al.
patent: 5430328 (1995-07-01), Hsue
patent: 5444018 (1995-08-01), Yost et al.
patent: 5504038 (1996-04-01), Chien et al.

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