Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-11-08
2005-11-08
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S643000, C438S653000, C438S678000
Reexamination Certificate
active
06962873
ABSTRACT:
A method describing a low temperature process of forming a cobalt nitride layer using electroless deposition, followed by a nitridation step, is disclosed. The process described is useful in integrated circuit device fabrication applications, especially those involving the use of copper. The invention can be used to create a highly effective capping layer in high interconnect copper devices.
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Theoretical Studies on the Electroless Metal Deposition Reaction Mechanism Group, printed from website http://www.appchem.waseda.ac.jp on Jul. 3, 2002. Published prior to the filing of this application. 3 Pages.
Beyer Weaver & Thomas LLP
Fourson George
Novellus Systems Inc.
Pham Thanh V.
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