Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Recessed oxide by localized oxidation
Patent
1998-07-20
1999-08-17
Bowers, Charles
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Recessed oxide by localized oxidation
438444, 438445, 257506, H01L 2176
Patent
active
059407182
ABSTRACT:
A method for fabricating a semiconductor device including a silicon substrate and plural silicon stacks thereon includes forming a nitride shield layer on the substrate and stacks to cover the stacks, such that the stacks are protected from loss of critical dimension during subsequent isolation trench formation and oxidation. In other words, the edge of each stack, and thus the critical dimension of the silicon layers of the stack, is protected from oxidation by the nitride shield layer.
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He Yue-Song
Ibok Effiong
Liu Yowjuang W.
Advanced Micro Devices
Blum David S
Bowers Charles
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