Nickel-silicon compound forming method, semiconductor device...

Details Nickel-silicon compound forming method, semiconductor device... Nickel-silicon compound forming method, semiconductor device...

2007-12-04

2007-12-04

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S651000

Reexamination Certificate

active

11185157

ABSTRACT:
A nickel-silicon compound forming method is disclosed which comprises forming nickel on at least one of only silicon and a compound containing silicon, and performing stepwise-heating of the nickel together with the at least one of only silicon and the compound containing silicon.

REFERENCES:
patent: 6225197 (2001-05-01), Maekawa
patent: 6506637 (2003-01-01), Maa et al.
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patent: 2000-101075 (2000-04-01), None
Office Action (Notification of Reasons for Rejection) from related Japanese Application No. 2003-323434, May 31, 2007.

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