Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-08-17
2009-02-03
Booth, Richard A. (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE21508
Reexamination Certificate
active
07485565
ABSTRACT:
A method for forming a nickel cap layer over copper metalized bond pad is disclosed in which the phosphorous content of the nickel cap, and particularly the surface of the nickel cap, may be controlled. The phosphorous content of the surface of the nickel cap is suitably determined such that oxidation is inhibited. The resulting nickel cap may be wire-bonded directly, without the deposition of a gold cap layer.
REFERENCES:
patent: 3599060 (1971-08-01), Triggs et al.
patent: 5869126 (1999-02-01), Kukanskis
patent: 6259161 (2001-07-01), Wu et al.
patent: 6281090 (2001-08-01), Kukanskis et al.
patent: 6335104 (2002-01-01), Sambucetti et al.
patent: 6362089 (2002-03-01), Molla et al.
patent: 6593221 (2003-07-01), Lindgren
patent: 6897761 (2005-05-01), Ernsberger et al.
patent: 7186636 (2007-03-01), Gleason et al.
Gleason Jeffery N.
Lindgren Joseph T.
Booth Richard A.
Fletcher Yoder
Micron Technologies, Inc.
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