Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-03-06
2007-03-06
Lee, Eugene (Department: 2815)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S686000, C438S508000, C438S508000, C438S687000, C438S617000
Reexamination Certificate
active
10915757
ABSTRACT:
A method for forming a nickel cap layer over copper metalized bond pad is disclosed in which the phosphorous content of the nickel cap, and particularly the surface of the nickel cap, may be controlled. The phosphorous content of the surface of the nickel cap is suitably determined such that oxidation is inhibited. The resulting nickel cap may be wire-bonded directly, without the deposition of a gold cap layer.
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Gleason Jeffery N.
Lindgren Joseph T.
Fletcher Yoder P.C.
Lee Eugene
Micro)n Technology, Inc.
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