New dry etch technique

Details New dry etch technique New dry etch technique

1993-04-05

1994-08-09

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156345, H01L 21306, B44C 122

Patent

active

053363663

ABSTRACT:
A dry etcher and method using two chambers can be used for anisotropic or isotropic etching. A pressure differential is created between the first and second chambers using a passage between the first and second chambers. Additionally, baffles which remove some of the ions created in the first chamber are used.

REFERENCES:
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patent: 4123316 (1978-10-01), Tsuchimoto
patent: 4192706 (1980-03-01), Horiike
patent: 4559099 (1985-12-01), Liebel et al.
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"A Dry Etching Technology Using Long-Live Active Species Excited by Microwave", by Y. Horiike and M. Shibagaki, Toshiba Research and Development Center, Tokyo Shibaura Electric Co., Ltd., Kawasaki, Japan, pp. 1-11.
"Down-Flow Type Resist Ashing Technique Employing Reaction of Fluorine Atoms to Water Vapor", by H. Okano, N. Hayasaka and Y. Horiike, VLSI Research Center Toshiba Corp.
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