Neutral pH silicon etchant for etching silicon in the presence o

Details Neutral pH silicon etchant for etching silicon in the presence o Neutral pH silicon etchant for etching silicon in the presence o

1978-03-08

1979-10-16

Massie, Jerome W.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156662, 252 793, H01L 21306

Patent

active

041712420

ABSTRACT:
A silicon etchant is disclosed composed of an aqueous solution of a fluoride ion and oxygen maintained at a substantially neutral pH. The etchant eliminates the problems of stripping organic photoresists, maintaining silicon/phosphosilicate glass selectively, silicon surface pitting, oxide residues, and insoluble reaction products.

REFERENCES:
patent: 2847287 (1958-08-01), Landgren
patent: 3041258 (1962-06-01), Sikina
patent: 3194703 (1965-07-01), Nijmegen
patent: 3434896 (1969-03-01), Chance
patent: 3497407 (1970-02-01), Esch et al.
patent: 3930870 (1976-01-01), Basi
patent: 4052253 (1977-10-01), Kingzett
Choudhury, "Substrate Surface . . . Silicon", Journal of the Electrochemical Society, vol. 118, No. 7 (1971), pp. 1183-1189.
Baran et al., "Anisotropic Etching . . . Silicon, " IBM Technical Disclosure Bulletin, vol. 19, No. 10 (3/77), p. 3953.

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