Neuron MOSFET with different interpolysilicon oxide

Details Neuron MOSFET with different interpolysilicon oxide Neuron MOSFET with different interpolysilicon oxide

1996-06-21

1997-05-27

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257300, 257314, 257316, 438211, 438981, 438257, H01L 27108, H01L 2976, H01L 29788

Patent

active

056335202

ABSTRACT:
An MOSFET device is fabricated with a plurality of conductors capacitively coupled to a first electrode, forming a mask on the surface of the first electrode exposing a predetermined zone of the first electrode, doping the first electrode through the mask, removing the mask from the surface of the first electrode, oxidizing the first electrode to form a layer of oxide over the first electrode with a thicker layer of oxide over the predetermined zone and a thinner layer of oxide elsewhere, forming at least one electrode over the first electrode on the thinner layer of oxide outside of the zone and forming at least one other electrode over the first electrode on the thicker layer of oxide inside the zone, whereby the one electrode and the other electrode have substantially different capacitive coupling to the electrode.

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Shibata et al., "Functional MOS Transistor Featuring Gate-Level Weighted Sum and Threshold Operations," IEEE Transactions on Electron Devices, vol. 39, No. 6, Jun. 1992, pp. 1444-1455.

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