Negative voltage discharge scheme to improve snapback in a...

Details Negative voltage discharge scheme to improve snapback in a... Negative voltage discharge scheme to improve snapback in a...

2011-01-04

2011-01-04

Nguyen, Dang T (Department: 2824)

Static information storage and retrieval

Read/write circuit

Accelerating charge or discharge

C365S185250, C365S185290, C365S218000

Reexamination Certificate

active

07864607

ABSTRACT:
Charge pump and discharge circuitry for a non-volatile memory device that splits up the discharge operation into two discharge periods. In a first discharge period, the voltage being discharged (e.g., erase voltage) is discharged through a pair of discharge transistors until the discharging voltage reaches a first voltage level. The path through the pair of discharge transistors is controlled by an intermediate control voltage so that none of the transistors of the pair enter the snapback condition. In the second discharge period, the remaining discharging voltage is fully discharged from the first level through a third discharge transistor.

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patent: 6944059 (2005-09-01), Macerola
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patent: 0 190 027 (1986-08-01), None
patent: 0668593 (1995-08-01), None
patent: 7-326195 (1995-12-01), None
English abstract for JP7326195A, published Dec. 12, 1995.

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