Negative voltage detection circuit and semiconductor...

Static information storage and retrieval – Read/write circuit – Differential sensing

Reexamination Certificate

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Details

C365S230060, C327S534000, C327S538000

Reexamination Certificate

active

07733730

ABSTRACT:
A negative voltage detection circuit including first and second MOS transistor circuits configured to change a dimension size of a transistor based on a control signal, a first comparator circuit, a gate electrode of the second MOS transistor circuit commonly coupled to the gate electrode of the first MOS transistor circuit forming a current mirror circuit, a resistive divider supplied with a negative voltage to be detected, and coupled to the end of the current path of the second MOS transistor circuit to generate a second voltage, a second voltage comparator circuit to compare the second voltage with a reference voltage and to generate a detection signal corresponding to the value of the negative voltage, and a detection circuit for detecting a temperature or power supply voltage, generate the control signal corresponding to the detection result, and supply the control signal to the first and second MOS transistor circuits.

REFERENCES:
patent: 6084387 (2000-07-01), Kaneko et al.
patent: 6566931 (2003-05-01), Higuchi
patent: 7524108 (2009-04-01), Yoshida et al.
patent: 2009/0174468 (2009-07-01), Yoshida et al.
patent: 11-219596 (1999-08-01), None
patent: 2000-19200 (2000-01-01), None
patent: 2001-325033 (2001-11-01), None
patent: 2004-350290 (2004-12-01), None

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