Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making
Patent
1998-08-26
2000-06-13
Baxter, Janet
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Radiation sensitive composition or product or process of making
430325, 430908, G03F 7038
Patent
active
06074801&
ABSTRACT:
A negative type photoresist composition is composed of a polymer which contains a repetition unit which is expressed by a general chemical formula (1), a crosslinker composed of a compound which contains a functional group which is expressed by a general chemical formula (2), and a photo-acid generator which generates acid in response to a light. The chemical formula (1) is as follows, ##STR1## In this case, R.sup.1 is a hydrogen atom or a methyl group, R.sup.2 is an alkylene group containing carbon atoms in a range of 7 to 18 and having a bridged cyclic hydrocarbon group, and a weight average molecule weight of the polymer is in a range of 1000 to 500000. Also, the chemical formula (2) is as follows, ##STR2## In this case, R.sup.8 is a hydrogen atom, an alkyl group containing carbon atoms in a range of 1 to 6 or an oxoalkyl group containing carbon atoms in a range of 3 to 6.
REFERENCES:
patent: 5650262 (1997-07-01), Munzel et al.
patent: 5665518 (1997-09-01), Maeda et al.
patent: 5817444 (1998-10-01), Sato et al.
patent: 5916729 (1999-06-01), Kobayashi et al.
patent: 5932391 (1999-08-01), Ushirogouchi et al.
patent: 5985522 (1999-11-01), Iwasa et al.
Takumi Ueno et al., "Chemical Amplification Positive Resist Systems Using Novel Sulfonates as Acid Generators", Sulfonates as Acid Generators, PME '89, Kodansya, 1990, pp. 413-424.
F.M. Houlihan et al., "The Synthesis, Characterization and Lithography of .alpha.-Substituted 2-Nitrobenzyl Arylsulfonate Photo-Acid Generators with Improved Resistance to Post Exposure Bake", SPIE, vol. 2195, 1994, pp. 137-151.
J.V. Crivello et al., "New Photoinitiators For Cationic Polymerization", Journal of the Polymer Science, Symposium No. 56, 1976, pp. 383-395.
James V. Crivello et al., "A New Preparation of Triarylsulfonium and -selenonium Salts via the Copper(II)- Catalyzed Arylation of Sulfides and Selenides with Diaryliodonium Salts", Journal of Organic Chemistry, vol. 43, No. 15, 1978, pp. 3055-3058.
Satoshi Takechi et al., "Alicyclic Polymer for ArF and KrF Excimer Resist Based on Chemical Amplification", Journal of Photopolymer Science and Technology, vol. 5, No. 3, 1992, pp. 439-446.
R.D. Allen et al., "Resolution and Etch Resistance of a Family of 193 nm Positive Resists", Journal of Photopolymer Science and Technology, vol. 8, No. 4, 1995, pp. 623-636.
Katsumi Maeda et al., "Novel Alkaline-Soluble Alicyclic Polymer Poly(TCDMACOOH) for ArF Chemically Amplified Positive Resists", SPIE, vol. 2724, 1996, pp. 377-398.
James W. Thackeray et al., "Deep UV ANR Photoresists For 248 nm Excimer Laser Photolithography", SPIE, vol. 1086, 1989, pp. 34-47.
R.D. Allen et al., "Progress in 193 nm Positive Resists", Journal of Photopolymer Science and Technology, vol. 9, No. 3, 1996, pp. 465-474.
Hasegawa Etsuo
Iwasa Shigeyuki
Maeda Katsumi
Nakano Kaichiro
Ashton Rosemary
Baxter Janet
NEC Corporation
LandOfFree
Negative type photoresist composition used for light beam with s does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Negative type photoresist composition used for light beam with s, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Negative type photoresist composition used for light beam with s will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2067313