Negative resist with oxygen plasma resistance

Details Negative resist with oxygen plasma resistance Negative resist with oxygen plasma resistance

1989-05-26

1990-06-19

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 1566591, 1566611, 156668, 156904, 427 431, 430296, 430313, B44C 122, B29C 3700, C03C 1500, C03C 2506

Patent

active

049350943

ABSTRACT:
Polymers formed from monomers such as chloromethyl styrene and trimethylgermylmethyl methacrylate form negative-acting resists that are extremely sensitive to exposure by electron beam and deep UV radiation. These materials are particularly useful in bilevel resist applications for fabricating masks or for device processing.

REFERENCES:
patent: 4481049 (1984-11-01), Reichmanis et al.
patent: 4521274 (1985-06-01), Reichmanis et al.
patent: 4701342 (1987-10-01), Novembre
Photoresist Materials and Processes, W. S. DeForrest, p. 223, McGraw-Hill, New York, 1975.
Polymer Chemistry, Malcolm P. Stevens, Addison-Wesley, 1973, Chapter 2.
Principles of Polymerization, G. Odian, Chapters 3 and 6, J. Wiley & Sons, New York, 1981.
Introduction to Microlithography, Chapter 6, edited by L. F. Thompson, C. G. Willson, and M. J. Bowden, American Chemical Society, Symposium Serial 219, Washington, D.C., 1983.
CRC Critical Reviews in Solid State Science, M. J. Bowden, p. 231, (Feb. 1979).

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