Negative resist materials, pattern formation method making use t

Details Negative resist materials, pattern formation method making use t Negative resist materials, pattern formation method making use t

1998-06-09

2000-08-22

Hamilton, Cynthia

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Radiation sensitive composition or product or process of making

522129, 522154, G03F 7038

Patent

active

061069981

ABSTRACT:
A negative resist material suitable for lithography employing for exposure a beam having a wavelength of 220 nm or less. The negative resist material contains a polymer having a weight average molecular weight of 1,000-500,000 and represented by the following formula (1): ##STR1## wherein R.sup.1, R.sup.3, and R.sup.5 are hydrogen atoms or methyl groups; R.sup.2 is a specified divalent hydrocarbon group; R.sup.4 is a hydrocarbon group having an epoxy group; R.sup.6 is a hydrogen atom or a C.sub.1-12 hydrocarbon group; and each of x, y, and z represents an arbitrary number satisfying certain relations; a photoacid generator generating an acid through exposure; and optionally a polyhydric alcohol or a polyfunctional epoxy group. The present invention also discloses a pattern formation method, and a method of manufacturing semiconductor devices using the pattern formation method.

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