Negative resist material and pattern formation method using...

Details Negative resist material and pattern formation method using... Negative resist material and pattern formation method using...

2005-03-01

2005-03-01

Thornton, Yvette C. (Department: 1752)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Radiation sensitive composition or product or process of making

C430S286100, C430S296000, C430S322000, C430S330000, C430S905000, C430S942000

Reexamination Certificate

active

06861198

ABSTRACT:
A negative resist material, which comprises at least a high polymer containing repeating units represented by the following general formula (1) and having a weight average molecular weight of 1,000 to 500,000. There is provided a negative resist material, in particular, a negative resist material of chemical amplification type, which shows high sensitivity, resolution, exposure latitude and process adaptability as well as good pattern shape after light exposure, and further shows superior etching resistance.

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patent: 6689530 (2004-02-01), Ohsawa et al.
patent: 20020081521 (2002-06-01), Takeda et al.
patent: 20030180653 (2003-09-01), Ohsawa et al.
patent: 499271 (1992-08-01), None
patent: 63-27829 (1988-02-01), None
patent: 2-27660 (1990-06-01), None

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