Negative resist composition comprising hydroxy-substituted...

Details Negative resist composition comprising hydroxy-substituted... Negative resist composition comprising hydroxy-substituted...

2006-09-12

2006-09-12

Thornton, Yvette C. (Department: 1752)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Radiation sensitive composition or product or process of making

C430S281100, C430S905000, C430S910000, C430S914000, C430S921000, C430S925000, C430S945000

Reexamination Certificate

active

07105271

ABSTRACT:
A negative resist composition and a method for patterning semiconductor devices using the composition are provided. The negative resist composition contains an alkali-soluble hydroxy-substituted base polymer, a silicon-containing crosslinker having an epoxy ring, and a photoacid generator. In the method for patterning semiconductor devices, fine patterns are formed according to a bi-layer resist process using the negative resist composition.

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patent: 6059444 (1994-03-01), None
patent: 0182513 (2001-08-01), None
Zhao et al., “Preparation and Properties of Polydimethylsiloxane-Modified Epoxy Resins”, Journal of Applied Polymer Science, vol. 76, 1683-1690 (2000).
Plueddemann et al., “Epoxyorganosiloxanes”, Journal of American Chemical Society, 81, 2632-2635 (1959).

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