Negative photoresist and method of using thereof

Details Negative photoresist and method of using thereof Negative photoresist and method of using thereof

2006-07-25

2006-07-25

Lee, Sin (Department: 1752)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Radiation sensitive composition or product or process of making

C430S325000, C430S311000, C430S313000, C430S329000, C430S905000, C430S906000, C430S907000, C430S910000, C430S914000, C430S921000, C430S922000

Reexamination Certificate

active

07081326

ABSTRACT:
A negative photoresist composition and a method of patterning a substrate through use of the negative photoresist composition. The composition includes: a radiation sensitive acid generator; a multihydroxy-containing additive; and a resist polymer comprising a first repeating unit from a first monomer. The resist polymer may also comprise a second repeating unit from a second monomer, wherein the second monomer has an aqueous base soluble moiety. The multihydroxy-containing additive has the structure Q-(OH)m, where Q may include at least one alicycic group and m may be any integer between 2 and 6. The acid generator is adapted to generate an acid upon exposure to radiation. The resist polymer is adapted to chemically react with the additive in the presence of the acid to generate a product that is insoluble in a developer solution.

REFERENCES:
patent: 6074801 (2000-06-01), Iwasa et al.
patent: 2000-63433 (2000-02-01), None
Chemical Abstract (132:187644) for JP 2000-63433 (Iwasa et al).
Machine-assisted English translation for JP 2000-63433 (Iwasa et al) provided by JPO.
Full, formal English translation of JP 2000-63433 (Iwasa et al), provided by USPTO.

Affiliated with

Also associated with

Rating

Negative photoresist and method of using thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Negative photoresist and method of using thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Negative photoresist and method of using thereof will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3540046