Negative differential resistance diode and SRAM utilizing...

Details Negative differential resistance diode and SRAM utilizing... Negative differential resistance diode and SRAM utilizing...

2009-02-10

2010-10-19

Wojciechowicz, Edward (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Including semiconductor material other than silicon or...

Containing germanium, ge

C257S107000, C257S321000, C257S401000, C365S175000

Reexamination Certificate

active

07816767

ABSTRACT:
A negative differential resistance (NDR) diode and a memory cell incorporating that NDR diode are provided. The NDR diode comprises a p-type germanium region in contact with an n-type germanium region and forming a germanium pn junction diode. A first gate electrode overlies the p-type germanium region, is electrically coupled to the n-type germanium region, and is configured for coupling to a first electrical potential. A second gate electrode overlies the n-type germanium region and is configured for coupling to a second electrical potential. A third electrode is electrically coupled to the p-type germanium region and may be coupled to the second gate electrode. A small SRAM cell uses two such NDR diodes with a single pass transistor.

REFERENCES:
patent: 3967305 (1976-06-01), Zuleeg
patent: 6501135 (2002-12-01), Krivokapic
patent: 7508050 (2009-03-01), Pei et al.

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