Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1989-07-26
1992-11-17
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257407, 257402, H01L 2712, H01L 2978, H01L 2962
Patent
active
051648059
ABSTRACT:
A submicrometer, near-intrinsic, thin-film, SOI complementary filed effect transistor structure is disclosed. The device is characterized by having a gate comprising material having a work function which approximates its Fermi level to the middle of the band gap of the channel material. Such devices display desirable transconductance, subthreshold slope and punch-through resistance.
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Jackson, Jr. Jerome
Massachusetts Institute of Technology
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