Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive
Reexamination Certificate
2006-12-05
2009-06-23
Nguyen, Dao H (Department: 2818)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Physical stress responsive
C438S050000, C438S053000, C438S066000, C438S637000, C438S666000, C257SE27006, C257SE21530, C257SE23078, C250S306000, C250S307000, C216S011000, C073S105000
Reexamination Certificate
active
07550311
ABSTRACT:
Provided is near-field optical probe including: a cantilever arm support portion that is formed of a lower silicon layer of a silicon-on-insulator (SOI) substrate, the cantilever arm support portion having a through hole formed therein at a side of the lower silicon layer; and a cantilever arm forming of a junction oxidation layer pattern and an upper silicon layer pattern on the SOI substrate that are supported on an upper surface of the lower silicon layer and each have a smaller hole than the through hole, a silicon oxidation layer pattern having a tip including an aperture at a vertical end, corresponding with the hole on the upper silicon layer pattern, and an optical transmission prevention layer that is formed on the silicon oxidation layer pattern and does not cover the aperture.
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“SNOM/AFM microprobe integrated with piezoresistive cantilever beam for multifunctional surface analysis.” P. Grabiec et al. © 2002 Microelectronic Engineering 61-62. pp. 981-986.
Kim Eunkyoung
Lee Sung Q
Park Kang Ho
Electronics and Telecommunications Research Institute
Ladas & Parry LLP
Nguyen Dao H
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