Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Patent
1994-03-30
1997-04-08
Huff, Mark F.
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
430329, 430296, 438947, 438696, 438669, H01L 21312, H01L 21302, H01L 21465
Patent
active
056183836
ABSTRACT:
In accordance with the present invention, there is provided a method by which narrow lateral dimensioned microelectronic structures can be formed using low temperature processes. An uncured resist layer (e.g. PMMA 42) is deposited on a supporting layer (e.g. silicon 40) and patterned. Then, by using an isotropic process such as a low temperature chemical vapor deposition, a conformal layer (e.g. silicon oxynitride 44) is deposited substantially evenly on the vertical walls and on the horizontal surfaces of the uncured resist layer. An anisotropic etch such as reactive ion etching is then used to substantially remove the conformal layer from the horizontal surfaces without substantially etching the conformal layer from the vertical walls of the resist. The resist can then be selectively removed, producing isolated vertical sidewall structures (e.g. silicon oxynitride 46) which could be used, for example, as a negative tone mask. Alternatively, instead of removing the resist, another resist layer (e.g. PMMA 48) could be spun on to planarize the structure, and then etched back to reveal the sidewall structures. The sidewall structures could then be selectively etched, producing a resist structure (e.g. PMMA 50) with openings the width of the sidewall structures.
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Carlson Brian
Donaldson Richard
Huff Mark F.
Stoltz Richard
Texas Instruments Incorporated
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