Narrow energy band gap gallium arsenide nitride...

Details Narrow energy band gap gallium arsenide nitride... Narrow energy band gap gallium arsenide nitride...

2006-06-06

2006-06-06

Picardat, Kevin M. (Department: 2822)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S522000, C438S530000, C257S441000, C257S102000

Reexamination Certificate

active

07056815

ABSTRACT:
A method for forming a semi-conductor material is provided that comprises forming a donor substrate constructed of GaAs, providing a receiver substrate, implanting nitrogen into the donor substrate to form an implanted layer comprising GaAs and nitrogen. The implanted layer is bonded to the receiver substrate and annealed to form GaAsN and nitrogen micro-blisters in the implanted layer. The micro-blisters allow the implanted layer to be cleaved from the donor substrate.

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patent: 6656271 (2003-12-01), Yonehara et al.
44th Electronic Materials Conference Oral presentation entitled “Ion-Cut-Synthesis of Narrow Gap Nitride Nanostructures” by X. Weng, et al. dated Jun., 2002.
2002 Spring Meeting of the Materials Research Society, Oral presentation entitled “Ion-Cut-Synthesis of Narrow Gap Nitride Alloys” by X. Weng, et al., dated Apr., 2002.
Journal of Vacuum Science and Technology B, publication entitled “Formation and Blistering of GaAsN Nanostructure Layers”, by X. Weng, et al. dated May-Jun., 2004 issue.

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