Narrow body raised source/drain metal gate MOSFET

Details Narrow body raised source/drain metal gate MOSFET Narrow body raised source/drain metal gate MOSFET

2006-04-25

2006-04-25

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S398000

Reexamination Certificate

active

07034361

ABSTRACT:
A semiconductor device includes a fin, a source region formed adjacent the fin and having a height greater than that of the fin, and a drain region formed adjacent the a second side of the fin and having a height greater than that of the fin. A metal gate region is formed at a top surface and at least one side surface of the fin. A width of the source and drain region may be greater than that of the fin. The semiconductor device may exhibit a reduced series resistance and an improved transistor drive current.

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Co-pending U.S. Appl. No. 10/632,965, filed Aug. 4, 2003, entitled: “Semiconductor Device Having A Thin Fin And Raised Source/Drain Areas,” Haihong Wang et al.; 18 page specification and 19 sheets of drawings.

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