Narrow-body damascene tri-gate FinFET

Details Narrow-body damascene tri-gate FinFET Narrow-body damascene tri-gate FinFET

2007-03-06

2007-03-06

Doan, Theresa T. (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S149000, C438S283000

Reexamination Certificate

active

10754540

ABSTRACT:
A method of forming a fin field effect transistor includes forming a fin and forming a source region on a first end of the fin and a drain region on a second end of the fin. The method further includes forming a dummy gate with a first semi-conducting material in a first pattern over the fin and forming a dielectric layer around the dummy gate. The method also includes removing the first semi-conducting material to leave a trench in the dielectric layer corresponding to the first pattern, thinning a portion of the fin exposed within the trench, and forming a metal gate within the trench.

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