Narrow band algan filter

Optical: systems and elements – Having significant infrared or ultraviolet property – Multilayer filter or multilayer reflector

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

252588, 359361, 359578, 359589, 257 17, 257 22, 257 21, 257 76, 257201, G02B 528, F21V 904, H01L 2714

Patent

active

051826704

ABSTRACT:
The invention is a filter device of at least two layers, the first layer of Al.sub.x Ga.sub.(1-x) N and the second layer of Al.sub.y Ga.sub.(1-y) N wherein x and y may have any value from 0 to 1. The invention may be used as a fixed wavelength or tunable wavelength filter or in ultraviolet detectors and laser devices, among other systems. Applications for the invention include detection of UV radiation in environments having a high level of incident infrared and visible radiation, as well as applications requiring detection of UV emission when no other radiation is present.

REFERENCES:
patent: 4300811 (1981-11-01), Ettenberg et al.
patent: 4368098 (1983-01-01), Manasevit
patent: 4404265 (1983-09-01), Manasevit
patent: 4614961 (1986-09-01), Khan et al.
patent: 4616248 (1986-10-01), Khan et al.
patent: 4666250 (1987-05-01), Southwell
patent: 4999842 (1991-03-01), Huang et al.
patent: 5012486 (1991-04-01), Luryi et al.
patent: 5052008 (1991-09-01), Kemeny
"High Efficiency (1.2 mW/mA) Top-Surface-Emitting GaAs Quantum Well Lasers at 850 nm, " Lee, et al., IEEE Photonics Technology Letters, vol. 2, No. 9, pp. 685-688, Sep. 9, 1990.
"Photoluminescence Characteristics of AlGaN-GaN-AlGaN Quantum Wells, " Khan et al., Appl. Phys. Lett., vol. 56, No. 13, pp. 1257-1259, Mar. 1990.
"Properties and Ion Implantation of Al.sub.x Ga.sub.1-x N Epitaxial Single Crystal Films Prepared by Low Pressure Metalorganic Chemical Vapor Deposition, " Khan et al., Appl. Phys. Lett., vol. 43, No. 5, pp. 492-494, Sep. 1983.
"Electrical Properties and Ion Implantation of Epitaxial GaN, Grown by Low Pressure Metalorganic Chemical Vapor Deposition, " Khan et al., Appl. Phys. Lett., vol. 42, No. 5, pp. 430-432, Mar. 1, 1983.
"Properties of Zn-doped VPE-Grown GaN.1. Luminenscence Data in Relation to Doping Conditions, " Monemar et al., Journal of Applied Physics, vol. 51, No. 1, pp. 625-639, Jan. 1980.
"Epitaxial Growth of GaN/A1N Heterostructures, Yoshida et al., Journal of Vacuum Science Technology, " vol. 1, No. 2, pp. 250-253, Apr.-Jun. 1983.
"P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI), " Amano et al., Japanese Journal of Applied Physics, vol. 28, No. 12, pp. L2112-L2114, Dec. 1989.
"Effects of the Buffer Layer in Metalorganic Vapour Phase Epitaxy of GaN on Sapphire Substrate, " Amano, et al, Thin Solid Films, 163, pp. 414-421, 1988.
"Stimulated Emission Near Ultraviolet at Room Temperature from a GaN Film Grown on Sapphire by MOVPE Using an A1N Buffer Layer, " Japanese Journal of Applied Physics, vol. 29, No. 2, pp. L205-L206, Feb. 1990.
"Improvements on the Electrical and Luminescent Properties of Reactive Molecular Beam Epitaxially Grown GaN Films by Using A1N-coated Sapphire Substrates, " Yoshida et al., Appl. Phys. Lett., vol. 42, No. 5, pp. 427-429, Mar. 1983.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Narrow band algan filter does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Narrow band algan filter, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Narrow band algan filter will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1416148

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.