Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices
Reexamination Certificate
2005-04-07
2008-11-18
Menz, Douglas M. (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Plural light emitting devices
C257S040000, C257SE51026, C438S082000, C438S099000
Reexamination Certificate
active
07453097
ABSTRACT:
A nanowire light emitting device and a method of fabricating the same are provided. The nanowire light emitting device includes a first conductive layer on a substrate, a plurality of nanowires on the first conductive layer, each nanowire having a p-type doped portion and an n-type doped portion on both ends, a light emitting layer between the p-type doped portion and n-type doped portion, and a second conductive layer formed on the nanowires. The doped portions are formed by adsorbing molecules around a circumference thereof.
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Choi Byoung-lyong
Jin Young-gu
Kim Jong-seob
Lee Hyo-sug
Lee Sung-hoon
Menz Douglas M.
Samsung Electronics Co,. Ltd.
Such Matthew W
Sughrue & Mion, PLLC
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