Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices
Reexamination Certificate
2005-04-07
2008-10-14
Menz, Douglas M. (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Plural light emitting devices
C257S040000, C257SE51026, C438S082000, C438S099000
Reexamination Certificate
active
07435996
ABSTRACT:
A nanowire light emitting device and a method of fabricating the same are provided. The nanowire light emitting device includes a first conductive layer formed on a substrate, a plurality of nanowires vertically formed on the first conductive layer, each of the nanowires having an n-type doped portion and a p-type doped portion, a light emitting layer between the n-type doped portion and the p-type doped portion, first and second conductive organic polymers filling a space corresponding to the p-type doped portion and the n-type doped portion, respectively, and a second conductive layer formed on the nanowires. The organic polymers dope the corresponding surface of the nanowires by receiving electrons from the corresponding surface of the nanowires or by providing electrons to the surface of the nanowires.
REFERENCES:
patent: 5075743 (1991-12-01), Behfar-Rad
patent: 5332910 (1994-07-01), Haraguchi et al.
patent: 7254151 (2007-08-01), Lieber et al.
patent: 2002/0172820 (2002-11-01), Majumdar et al.
patent: 2002/0175408 (2002-11-01), Majumdar et al.
patent: 2003/0168964 (2003-09-01), Chen
patent: 2004/0003839 (2004-01-01), Curtin
patent: 2004/0109666 (2004-06-01), Kim
patent: 2005/0006673 (2005-01-01), Samuelson et al.
patent: 2006/0207647 (2006-09-01), Tsakalakos et al.
patent: 2004-418 (2004-01-01), None
Ng, Kwok K., Complete Guide to Semiconductor Devices. New York: John Wiley & Sons. 2002. pp. 405-406.
Guk, E.G., et al. “Dopant Impurity Diffusion from Polymer Diffusants and its Applications in Semiconductor Device Technology. A Review.” Semiconductors. vol. 33, No. 3 (1999): pp. 265-275.
Choi Byoung-lyong
Jin Young-gu
Kim Jong-seob
Lee Hyo-sug
Lee Sung-hoon
Menz Douglas M.
Samsung Electronics Co,. Ltd.
Such Matthew W
Sughrue & Mion, PLLC
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