Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2011-04-05
2011-04-05
Nguyen, Thinh T (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S097000, C257S088000, C257S040000, C257SE33001, C977S762000
Reexamination Certificate
active
07919786
ABSTRACT:
A nanowire light emitting device is provided. The nanowire light emitting device includes a substrate, a first conductive layer formed on the substrate, a plurality of nanowires vertically formed on the first conductive layer, each nanowire comprising a p-doped portion and an n-doped portion, a light emitting layer between the p-doped portion and the n-doped portion, a second conductive layer formed on the nanowires, and an insulating polymer in which a light emitting material is embedded, filling a space between the nanowires. The color of light emitted from the light emitting layer varies according to the light emitting material.
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Choi Byoung-Lyong
Jin Young-gu
Kim Jong-Seob
Lee Hyo-sug
Lee Sung-hoon
Nguyen Thinh T
Samsung Electronics Co,. Ltd.
Sughrue & Mion, PLLC
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