Nanowire device and method of fabricating the same

Details Nanowire device and method of fabricating the same Nanowire device and method of fabricating the same

2008-04-15

2008-04-15

Nguyen, Cuong (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S017000, C257S040000, C257S079000

Reexamination Certificate

active

07358524

ABSTRACT:
A nanowire device having a structure allowing for formation of p-type and n-type doped portions in a nanowire, and a method of fabricating the same. The nanowire device includes a substrate, a first electrode layer formed on the substrate, a second electrode layer facing the first electrode layer, a plurality of nanowires interposed at a predetermined interval between the first electrode layer and the second electrode layer to connect the same, and an electrolyte containing an electrolytic salt filling spaces between the nanowires.

REFERENCES:
patent: 7122827 (2006-10-01), Alizadeh et al.
patent: 2007/0235738 (2007-10-01), Jin et al.
patent: 2007/0267625 (2007-11-01), Wang et al.

Affiliated with

Also associated with

Rating

Nanowire device and method of fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nanowire device and method of fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nanowire device and method of fabricating the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2766644