Nanowire capacitor and methods of making same

Active solid-state devices (e.g. – transistors – solid-state diode – Voltage variable capacitance device – With physical configuration to vary voltage dependence

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S009000, C257SE29070, C977S762000

Reexamination Certificate

active

07667296

ABSTRACT:
A nanowire capacitor and methods of making the same are disclosed. The nanowire capacitor includes a subrate and a semiconductor nanowire that is supported by the substrate. An insulator is formed on a portion of the surface of the nanowire. Additionally, an outer coaxial conductor is formed on a portion insulator and a contact coupled to the nanowire.

REFERENCES:
patent: 5962863 (1999-10-01), Russell et al.
patent: 6256767 (2001-07-01), Kuekes et al.
patent: 6447663 (2002-09-01), Lee et al.
patent: 6566704 (2003-05-01), Choi et al.
patent: 6586785 (2003-07-01), Flagan et al.
patent: 6760245 (2004-07-01), Eaton et al.
patent: 6798000 (2004-09-01), Luyken et al.
patent: 7083104 (2006-08-01), Empedocles et al.
patent: 2002/0117659 (2002-08-01), Lieber et al.
patent: 2002/0127495 (2002-09-01), Scherer
patent: 2002/0130311 (2002-09-01), Lieber et al.
patent: 2002/0130353 (2002-09-01), Lieber et al.
patent: 2002/0163079 (2002-11-01), Awano
patent: 2002/0175408 (2002-11-01), Majumdar et al.
patent: 2003/0012723 (2003-01-01), Clarke
patent: 2003/0042562 (2003-03-01), Giebeler et al.
patent: 2003/0089899 (2003-05-01), Lieber et al.
patent: 2003/0186522 (2003-10-01), Duan et al.
patent: 2003/0189202 (2003-10-01), Li et al.
patent: 2004/0036126 (2004-02-01), Chau et al.
patent: 2004/0061422 (2004-04-01), Avouris et al.
patent: 2004/0112964 (2004-06-01), Empedocles et al.
patent: 2004/0175844 (2004-09-01), Yang et al.
patent: 2005/0176228 (2005-08-01), Fonash et al.
patent: WO-0103208 (2001-01-01), None
patent: WO-0217362 (2002-02-01), None
patent: WO-0248701 (2002-06-01), None
patent: WO-2004032193 (2004-04-01), None
Chung et al., “Silicon Nanowire Devices,” Appl. Phys. Letts. (2000) 76(15):2068-2070.
Duan et al., “High Performance Thin-Film Transistors Using Semiconductor Nanowires and Nanoribbons,” Nature (2003) 425:274-278.
Tans et al., “Room-Temperature Transistor Based on a Single Carbon Nanotube,” Nature (1998) 393:49-52.
Yamada, “Analysis of Submicron Carbon Nanotube Field-Effect Transistors,” Appl. Phys. Letts. (2000) 76(5):628-630.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Nanowire capacitor and methods of making same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nanowire capacitor and methods of making same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nanowire capacitor and methods of making same will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4196053

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.