Nanowire-based memristor devices

Details Nanowire-based memristor devices Nanowire-based memristor devices

2009-10-27

2011-11-01

Sofocleous, Alexander (Department: 2824)

Static information storage and retrieval

Systems using particular element

C365S148000, C365S151000, C977S943000

Reexamination Certificate

active

08050078

ABSTRACT:
Embodiments of the present invention are directed to memristor devices that provide nonvolatile memristive switching. In one embodiment, a memristor device includes a first electrode, a second electrode, and a nanowire disposed between the first electrode and the second electrode. The nanowire is configured with an inner region surrounded by an outer layer. The memristor device may also include a mobile dopant confined to the inner region by repulsive electrostatic forces between the outer layer and the mobile dopant. The resistance of the nanowire is determined by the distribution of the mobile dopant in the inner region.

REFERENCES:
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patent: 2011/0176353 (2011-07-01), Li et al.
Chua, “Memristor—The Missing Circuit Element,” Sep. 1971, IEEE Transactions on Circuit Theory, vol. CT-18, No. 5, pp. 507-519.
Strukov et al., “The missing memristor found,” May 2008, Nature, vol. 453, pp. 80-83.
Strukov, “Memristors and Their Applications,” Oct. 2, 2008, presented at 2008-2009 Palo Alto Colloquia, 69 pages. Presentation slides avaialble at http://www.lockheedmartin.com/ssc/AdvancedTechnologyCtr/colloquia/20082009ColloquiaSchedule.html.
Di Ventra et al., “Circuit element with memory: memristors, memcapacitors and meminductors,” Oct. 2009, Proceedings of the IEEE, vol. 97, No. 10, pp. 1717-1724.

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