Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2004-04-01
2008-10-07
Baumeister, Bradley W. (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S014000, C257S029000, C257SE29001, C977S932000
Reexamination Certificate
active
07432522
ABSTRACT:
Nano-engineered structures are disclosed, incorporating nanowhiskers of high mobility conductivity and incorporating pn junctions. In one embodiment, a nanowhisker of a first semiconducting material has a first band gap, and an enclosure comprising at least one second material with a second band gap encloses said nanoelement along at least part of its length, the second material being doped to provide opposite conductivity type charge carriers in respective first and second regions along the length of the of the nanowhisker, whereby to create in the nanowhisker by transfer of charge carriers into the nanowhisker, corresponding first and second regions of opposite conductivity type charge carriers with a region depleted of free carriers therebetween. The doping of the enclosure material may be degenerate so as to create within the nanowhisker adjacent segments having very heavy modulation doping of opposite conductivity type analogous to the heavily doped regions of an Esaki diode. In another embodiment, a nanowhisker is surrounded by polymer material containing dopant material. A step of rapid thermal annealing causes the dopant material to diffuse into the nanowhisker. In a further embodiment, a nanowhisker has a heterojunction between two different intrinsic materials, and Fermi level pinning creates a pn junction at the interface without doping.
REFERENCES:
patent: 5196396 (1993-03-01), Lieber
patent: 5252835 (1993-10-01), Lieber et al.
patent: 5332910 (1994-07-01), Haraguchi et al.
patent: 5362972 (1994-11-01), Yazawa et al.
patent: 5544617 (1996-08-01), Terui et al.
patent: 5840435 (1998-11-01), Lieber et al.
patent: 5858862 (1999-01-01), Westwater et al.
patent: 5899734 (1999-05-01), Lee
patent: 5976957 (1999-11-01), Westwater et al.
patent: 5997832 (1999-12-01), Lieber et al.
patent: 6130142 (2000-10-01), Westwater et al.
patent: 6130143 (2000-10-01), Westwater et al.
patent: 6159742 (2000-12-01), Lieber et al.
patent: 6190634 (2001-02-01), Lieber et al.
patent: 6307241 (2001-10-01), Awschalom et al.
patent: 6559468 (2003-05-01), Kuekes et al.
patent: 6716409 (2004-04-01), Hafner et al.
patent: 6743408 (2004-06-01), Lieber et al.
patent: 2002/0129761 (2002-09-01), Takami
patent: 2002/0130311 (2002-09-01), Lieber et al.
patent: 2002/0172820 (2002-11-01), Majumdar et al.
patent: 2002/0175408 (2002-11-01), Majumdar et al.
patent: 2003/0089899 (2003-05-01), Lieber et al.
patent: 2003/0121764 (2003-07-01), Yang et al.
patent: 2003/0200521 (2003-10-01), DeHon et al.
patent: 2004/0213307 (2004-10-01), Lieber et al.
patent: 0 443 920 (1991-08-01), None
patent: 0 838 865 (1998-04-01), None
patent: 1 314 189 (2003-05-01), None
patent: 1 342 075 (2003-09-01), None
patent: 2000-068493 (2000-03-01), None
patent: WO 95/02709 (1995-01-01), None
patent: WO 97/31139 (1997-08-01), None
patent: WO 01/03208 (2001-01-01), None
patent: WO 01/77726 (2001-10-01), None
patent: WO 01/84238 (2001-11-01), None
patent: WO 02/01648 (2002-01-01), None
patent: WO 02/080280 (2002-10-01), None
patent: WO 03/005450 (2003-01-01), None
patent: 03/053851 (2003-07-01), None
patent: 03/063208 (2003-07-01), None
patent: 2004/010552 (2004-01-01), None
patent: 2004/038767 (2004-05-01), None
Yasawa, M. et al, “Heteroepitaxial Ultrafine Wire-Like Growth of InAs on GaAs Substrates”,Appl. Phys Lett.,vol. 58, No. 10, Mar. 11, 1991, pp. 1080-1082.
Haraguchi, K. et al., “GaAs p-n junction formed in quantum wire crystals”,Applied Physics Letters,vol. 60, No. 6, Feb. 10, 1992, pp. 745-747.
Yazawa, M., et al., “Effect of one monolayer of surface gold atoms on the epitaxial growth of InAs nanowhiskers”,Applied Physics Letters,vol. 61, Oct. 26, 1992, pp. 2051-2053.
Yazawa, M., “Nanocolumns composed of GaAs-InAs jointed whiskers and Si02 covers”,Applied Physics Letters,vol. 65, Aug. 29, 1994, pp. 1157-1158.
Sato, T., “Site-controlled growth of nanowhiskers”,Applied Physics Letters,vol. 66, Jan. 9, 1995, pp. 159-161.
Hiruma, K., et al., “Growth and optical properties of nanometer-scale GaAs and InAs whiskers”,Applied Physics Review,vol. 77, Jan. 15, 1995, pp. 447-462.
Hiruma K., et al., “Growth and Characterization of Nanometer-Scale GaAs, AiGaAs and GaAs/InAs Wires”,IEICE Trans. Electron.,vol. E77-C, No. 9, Sep. 1, 1994, pp. 1420-1425.
Hiruma, K. et al., “GaAs free-standing quantum-size wires”,Journal of Applied Physics,vol. 74, Sep. 1, 1993, pp. 3162-3171.
Haraguchi, K., et al., “Polarization dependence of light emitted from GaAs p-n junctions in quantum wire crystals”,Journal of Applied Physics,vol. 75, Apr. 15, 1994, pp. 4220-4225.
Hiruma, K., et al., Self-organized growth of GaAs/InAs heterostructure nanocylinders by organometallic vapor phase epitaxy,Journal of Crystal Growth,vol. 163, Jan. 1, 1996, pp. 226-231.
Lieber, C., “Nanowires as Building Blocks for Nanoscale Science and Technology”,Abstracts of Papers of the Amer. Chem Soc.,vol. 224, Aug. 18, 2002, pp. 033-Comp Part 1.
Duan, X., et al., “Laser-Assisted Catalytic Growth of Single-Crystal Compound Semiconductor Nanowires”,Abstracts of Papers of the Amer. Chem., Soc.,vol. 219, Mar. 26, 2000, pp. 676-Inor Part 1.
Duan, X. et al., “Laser Assisted Catalytic Growth of Semiconductor Nanowires for Nanoscale Electronic Optoelectronic Device Application”,Abstracts of Papers of the Amer. Chem. Soc.,vol. 221, Apr. 1, 2001, pp. 644-Inor Part 1.
Lieber, C., “Semiconductor Nanowires: Building Blocks for Nanoscale Science and Technology”,Abstracts of Papers of the Amer. Chem. Soc.,vol. 222, Aug. 1, 2001, pp. 383-Phys Part 2.
Huang, Y., et al., “Integrated Optoelectronics Assembled from Semiconductor Nanowires”,Abstracts of Papers of the Amer. Chem. Soc.,vol. 224, Aug. 18, 2002, pp. 093-Phys—Part 2.
Hu, J. et al., “Chemistry and Physics in One Dimension: Synthesis and Properties of Nanowires and Nanotubes”, Acc. Chem. Res., vol. 32, No. 5, Feb. 20, 1999, p. 435-445.
Duan, X. et al., “General Synthesis of Compound Semiconductor Nanowires”,Advanced Materials,vol. 12, No. 4, Jan. 1, 2000, pp. 298-302.
Duan, X., et al., “Synthesis and optical properties of gallium arsenide nanowires”,Applied Physics Letters,vol. 76, No. 9, Feb. 28, 2000, pp. 1116-1118.
Cui, Y., et al., “Diameter-controlled synthesis of single-crystal silicon nanowires”,Applied Physics Letters,vol. 78, No. 15, Apr. 9, 2001, pp. 2214-2216.
Gudiksen M.S., et al., “Diameter-selective synthesis of semiconductor nanowires”,J. Am. Chem. Soc.,vol. 122, Aug. 22, 2000, pp. 8801-8802.
Gudiksen M., et al., “Size-Dependent Photoluminescence from Single Indium Phosphide Nanowires”,Journal of Physical Chemistry B,vol. 106, No. 16, Mar. 30, 2002, pp. 4036-4039.
Duan, X., et al., “Laser-Assisted Catalytic Growth of Single Crystal GaN Nanowires”,Journal of Amer. Chem. Soc.,vol. 122, No. 1, Dec. 18, 1999, pp. 188-189.
Huang, Y., et al., “Gallium Nitride Nanowire Nanodevices”,Nano Letters,vol. 2, No. 2, Jan. 11, 2002, pp. 81-82.
Lieber C., “Nanowire Superlattices”,Nano Letters,vol. 2, No. 2, Jan. 25, 2002, pp. 82-82.
Duan, X., et al., “Nonvolatile Memory and Programmable Logic from Molecule-Gated Nanowires”,Nano Letters,vol. 2, No. 5, May 1, 2002, pp. 487-490.
Cui, Y., et al., “High Performance Silicon Nanowire Field Effect Transistors”,Nano Letters,vol. 3, No. 2, Jan. 1, 2003, pp. 149-152.
Zhong, Z., et al., “Synthesis of P-Type Gallium Nitride Nanowires for Electronic and Photonic Nanodevices”,Nano Letters,vol. 3, No. 3, Feb. 20, 2003, pp. 343-346.
Hu, J., et al., “Controlled Growth and Electrical Properties of Heterojunctions of Carbon Nanotubes and Silicon Nanowires”,Nature,vol. 339, May 6, 1999, pp. 48-51.
Duan, X., et al., “Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices”,Nature,vol. 409,
Ledebo Lars-Åke
Ohlsson Bjorn Jonas
Samuelson Lars Ivar
Baumeister Bradley W.
Foley & Lardner LLP
QuNano AB
Reames Matthew L
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