Nanotube semiconductor devices and methods for making the same

Details Nanotube semiconductor devices and methods for making the same Nanotube semiconductor devices and methods for making the same

2005-02-22

2005-02-22

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S306000, C257S309000, C257S530000, C257S531000, C438S253000, C438S254000

Reexamination Certificate

active

06858891

ABSTRACT:
Provided herein are vertical nanotube semiconductor devices and methods for making the same. An embodiment of the semiconductor devices comprises a vertical transistor/capacitor cell including a nanotube. The device includes a vertical transistor and a capacitor cell both using a single nanotube to form the individual devices.

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