Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation
Reexamination Certificate
2007-10-09
2007-10-09
Baumeister, Bradley (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Physical deformation
C257S418000, C257SE29167, C438S052000, C977S742000, C977S940000, C200S181000
Reexamination Certificate
active
10508288
ABSTRACT:
The present invention relates to a nanotube device (100, 600), comprising a nanotube with a longitudinal and a lateral extension, a structure for supporting at least a first part of the nanotube, and first means for exerting a force upon the nanotube in a first direction defined by its lateral extension. At least a second part of the nanotube protrudes beyond the support of said structure, so that when said force exceeds a certain level, the second part of the nanotube will flex in the direction of its lateral extension, and thereby close a first electrical circuit. Suitably, the first means for exerting said force upon the nanotube is an electrical means, the force being created by applying a voltage to the means.
REFERENCES:
patent: 6756795 (2004-06-01), Hunt et al.
patent: 2002/0130353 (2002-09-01), Lieber et al.
patent: 2003/0021966 (2003-01-01), Segal et al.
patent: 100 34 315 (2002-01-01), None
patent: WO-00/52722 (2000-09-01), None
patent: WO-01/61753 (2001-08-01), None
Dequesnes, et al, Calculation Of Pull-In Voltages For Carbon-Nanotube-Based Nanoelectromechanical Switches, Nanotechnology, Jan. 22, 2002, pp. 120-131, vol. 13, IOP Publishing Ltd. UK.
Kinaret Jari
Nord Tomas
Viefers Susanne
Baumeister Bradley
Chalmers Intellectual Property Rights AB
Fulk Steven J.
Lerner, David, Littenberg, Krumholz & Mentlink, LLP
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