Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation
Reexamination Certificate
2006-10-03
2006-10-03
Coleman, W. David (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Physical deformation
C977S762000
Reexamination Certificate
active
07115960
ABSTRACT:
Nanotube-based switching elements and logic circuits. Under one embodiment of the invention, a switching element includes an input node, an output node, a nanotube channel element having at least one electrically conductive nanotube, and a control electrode. The control electrode is disposed in relation to the nanotube channel element to controllably form an electrically conductive channel between the input node and the output node. The channel at least includes said nanotube channel element. The output node is constructed and arranged so that channel formation is substantially unaffected by the electrical state of the output node. Under another embodiment of the invention, the control electrode is arranged in relation to the nanotube channel element to form said conductive channel by causing electromechanical deflection of said nanotube channel element. Under another embodiment of the invention, the output node includes an isolation structure disposed in relation to the nanotube channel element so that channel formation is substantially invariant from the state of the output node. Under another embodiment of the invention, the isolation structure includes electrodes disposed on opposite sides of the nanotube channel element and said electrodes produce substantially the same electric field. Under another embodiment of the invention, a Boolean logic circuit includes at least one input terminal and an output terminal, and a network of nanotube switching elements electrically disposed between said at least one input terminal and said output terminal. The network of nanotube switching elements effectuates a Boolean function transformation of Boolean signals on said at least one input terminal. The Boolean function transformation includes a Boolean inversion within the function, such as a NOT or NOR function.
REFERENCES:
patent: 4853893 (1989-08-01), Eaton et al.
patent: 4979149 (1990-12-01), Popovic et al.
patent: 6128214 (2000-10-01), Kuekes et al.
patent: 6198655 (2001-03-01), Heath et al.
patent: 6232706 (2001-05-01), Dai et al.
patent: 6445006 (2002-09-01), Brandes et al.
patent: 6518156 (2003-02-01), Chen
patent: 6548841 (2003-04-01), Frazier et al.
patent: 6559468 (2003-05-01), Kuekes et al.
patent: 6574130 (2003-06-01), Segal et al.
patent: 6643165 (2003-11-01), Segal et al.
patent: 6673424 (2004-01-01), Lindsay
patent: 6706402 (2004-03-01), Rueckes et al.
patent: 6750471 (2004-06-01), Bethune et al.
patent: 6759693 (2004-07-01), Vogeli et al.
patent: 6774052 (2004-08-01), Vogeli et al.
patent: 6781166 (2004-08-01), Lieber et al.
patent: 6784028 (2004-08-01), Rueckes et al.
patent: 6803840 (2004-10-01), Hunt et al.
patent: 6809465 (2004-10-01), Jin
patent: 6835591 (2004-12-01), Rueckes et al.
patent: 6836424 (2004-12-01), Segal et al.
patent: 2002/0130353 (2002-09-01), Lieber et al.
patent: 2002/0172963 (2002-11-01), Kelley et al.
patent: 2002/0175390 (2002-11-01), Goldstein et al.
patent: 2002/0179434 (2002-12-01), Dai et al.
patent: 2003/0021966 (2003-01-01), Segal et al.
patent: 2003/0124325 (2003-07-01), Rueckes et al.
patent: 2003/0165074 (2003-09-01), Segal et al.
patent: 2003/0200521 (2003-10-01), DeHon et al.
patent: 2004/0085805 (2004-05-01), Segal et al.
patent: 2004/0159833 (2004-08-01), Rueckes et al.
patent: 2004/0164289 (2004-08-01), Rueckes et al.
patent: 2004/0175856 (2004-09-01), Jaiprakash et al.
patent: 2004/0181630 (2004-09-01), Jaiprakash et al.
patent: 2004/0191978 (2004-09-01), Rueckes et al.
patent: 2004/0214366 (2004-10-01), Segal et al.
patent: 2004/0214367 (2004-10-01), Segal et al.
patent: 2005/0035344 (2005-02-01), Bertin et al.
patent: 2005/0035786 (2005-02-01), Bertin et al.
patent: 2005/0035787 (2005-02-01), Bertin et al.
patent: 2005/0036365 (2005-02-01), Bertin et al.
patent: 2005/0037547 (2005-02-01), Bertin et al.
patent: 2005/0041465 (2005-02-01), Rueckes et al.
patent: 2005/0041466 (2005-02-01), Rueckes et al.
patent: 2005/0052894 (2005-03-01), Segal et al.
patent: 2005/0056877 (2005-03-01), Rueckes et al.
patent: WO 01/03208 (2001-01-01), None
patent: WO 01/44796 (2001-06-01), None
patent: WO 03/091486 (2003-11-01), None
patent: WO 04/065655 (2004-08-01), None
patent: WO 04/065657 (2004-08-01), None
patent: WO 04/065671 (2004-08-01), None
Dequesnes, M. et al., “Calculation of pull-in voltages for carbon-nanotube-based nanoelectromechanical switches,”Nanotechnology, 2002, vol. 13, pp. 120-131.
Dequesnes, M. et al., “Simulation of carbon nanotube-based nanoelectromechanical switches,”Computational Nanoscience and Nanotechnology, 2002, pp. 383-386.
Ruoff, R.S. et al., “Mechanical and thermal properties of carbon nanotubes,”Carbon, 1995. 33 (7) 925-930.
Robinson, L.A.W., “Self-Aligned Electrodes for Suspended Carbon Nanotube Structures,”Microelectronic Engineering, 2003, vol. 67-68, pp. 615-622.
Tour, J. M. et al., “NanoCell Electronic Memories,”J. Am. Chem Soc., 2003, vol. 125, pp. 13279-13283.
Rueckes, T., et al., “Carbon Nanotube—Based Nonvolatile Random Access Memory for Molecular Computing”Science, 2000, vol. 289, pp. 94-97.
Fan, S. et al., “Carbon nanotube arrays on silicon substrates and their possible application,”Physica E, 2000, vol. 8, pp. 179-183.
Soh, H. T. et al., “Integrated nanotube circuits: Controlled growth and ohmic contacting of single-walled carbon nanotubes,”Appl. Phys. Lett., 1999, vol. 75(5), pp. 627-629.
Franklin, N. R. et al., “Integration of suspended carbon nanotube arrays into electronic devices and electromechanical systems,”Appl. Phys. Lett., 2002, vol. 81(5), pp. 913-915.
Kinaret, J.M. et al., “A carbon-nanotube-based nanorelay”,Appl. Phys. Lett., 2003, vol. 82(8), pp. 1287-1289.
Avouris, Ph., “Carbon nanotube electronics,” Chem. Physics, 2002, vol. 14, pp. 429-445.
Ajayan, P.M., et al., “Nanometre-size tubes of carbon,”Rep. Prog. Phys., 1997, vol. 60, pp. 1025-1062.
Sreekumar, T.V., et al., “Single-wall Carbon Nanotube Films”,Chem. Mater. 2003, vol. 15, pp. 175-178.
Verissimo-Alves, M. et al., “Electromechanical effects in carbon nanotubes:Ab initioand analytical tight-binding calculations,”Phys. Rev. B, 2003,/vol. 67, pp. 161401-1=16140-4.
Fuhrer, M.S. et al., “High-Mobility Nanotube Transistor Memory,”Nano Letters, 2002, vol. 2(7), pp. 755-759.
Radosavljevic, M. et al., “Nonvolatile molecular memory elements based on ambipolar nanotube field effect transistors,”Nano Letters, 2002, vol. 2(7), pp. 761-764.
Farajian, A. A. et al., “Electronic transport through bent carbon nanotubes: Nanoelectromechanical sensors and switches,”Phys. Rev. B, 2003, vol. 67, pp. 205423-1=205423-6.
Fischer, J.E. et al., “Magnetically aligned single wall carbon nanotube films: Preferred orientation and anisotropic transport properties,”Journal of Appl. Phys., 2003, vol. 93(4), pp. 2157-2163.
Casavant, M.J. et al., “Neat macroscopic membranes of aligned carbon nanotubes,”Journal of Appl. Phys., 2003, vol. 93(4), pp. 2153-2156.
Ami, S. et al., “Logic gates and memory cells based on single C60electromechanical transistors,”Nanotechnology, 2001, vol. 12, pp. 44-52.
Dehon, A., “Array-Based Architecture for FET-Based, Nanoscale Electronics,”IEEE Transactions on Nanotechnology, 2003, vol. 2(1), pp. 23-32.
Tans, S. et al., “Room-temperature based on a single carbon nanotube,”Nature, 1998. vol. 393, pp. 49-52.
Cui, J.B. et al., “Carbon Nanotube Memory Devices of High Charge Storage Stability,”Appl. Phys. Lett., 2002, vol. 81(17), pp. 3260-3262.
Sapmaz, S. et al., “Carbon nanotubes as nanoelectromechanical systems,”Phys. Rev. B., 2003, vol. 67, pp. 235414-1=235414-6.
Berhan, L. et al., “Mechanical properties of Nanotube sheets: alterations in joint morphology and achievable moduli in manufacturable materials,”Journal of Appl. Phys., 2004, vol. 95(8), pp. 4335-4344.
Nardelli, M. Buongiorno
Bertin Claude L.
Rueckes Thomas
Segal Brent M.
Coleman W. David
Nantero Inc.
Wilmer Cutler Pickering Hale and Dorr LLP
LandOfFree
Nanotube-based switching elements does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Nanotube-based switching elements, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nanotube-based switching elements will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3715844