Nanotube based nonvolatile memory device and a method of...

Details Nanotube based nonvolatile memory device and a method of... Nanotube based nonvolatile memory device and a method of...

2006-11-03

2010-10-12

Toledo, Fernando L (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

C257SE51004, C257SE29169, C257S415000, C977S742000, C977S784000

Reexamination Certificate

active

07812376

ABSTRACT:
Provided are a nonvolatile memory device and methods of fabricating and operating the same. The memory device may include a substrate, at least a first and a second electrode on the substrate to be spaced a distance from each other, a conductive nanotube between the first and second electrodes and selectively coming into contact with the first electrode or the second electrode due to an electrostatic force and a support supporting the conductive nanotube. The memory device may be an erasable nonvolatile memory device which may retain information even when no power is supplied and may ensure relatively high operating speed and relatively high integration density. Because the memory device writes and erases information in units of bits, the memory device may be applied to a large number of fields.

REFERENCES:
patent: 6924538 (2005-08-01), Jaiprakash et al.
patent: 2004/0181630 (2004-09-01), Jaiprakash et al.
patent: 2004/0240252 (2004-12-01), Pinkerton et al.
patent: 2005/0279988 (2005-12-01), Bertin
Korean Office Action dated Oct. 30, 2006.
Chinese Office Action dated Jun. 5, 2009 in corresponding Chinese Application No. 200610142807.4. with English translation.

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