Nanotube- and nanocrystal-based non-volatile memory

Details Nanotube- and nanocrystal-based non-volatile memory Nanotube- and nanocrystal-based non-volatile memory

2006-11-14

2009-12-08

Tran, Minh-Loan T (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S321000, C257SE29300, C257SE29304

Reexamination Certificate

active

07629639

ABSTRACT:
An embodiment is a transistor for non-volatile memory that combines nanocrystal and nanotube paradigm shifts. In particular an embodiment is a transistor-based non-volatile memory element that utilizes a carbon nanotube channel region and nanocrystal charge storage regions. Such a combination enables a combination of low power, low read and write voltages, high charge retention, and high bit density. An embodiment further exhibits a large memory window and a single-electron drain current.

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