Nanotube and graphene semiconductor structures with varying...

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation

Reexamination Certificate

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C257S077000, C257S415000

Reexamination Certificate

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08044472

ABSTRACT:
Nanotube and graphene transducers are disclosed. A transducer according to the present invention can include a substrate, a plurality of semiconductive structures, one or more metal pads, and a circuit. The semiconductive structures can be nanotubes or graphene located entirely on a surface of the substrate, such that each of the semiconductive structures is supported along its entire length by the substrate. An electrical property of the semiconductive structures can change when a force is applied to the substrate. The metal pads can secure at least one of the semiconductive structures to the substrate. The circuit can be coupled to at least some of the semiconductive structures to provide an output responsive to the change in the electrical property of the semiconductive structures, so as to indicate the applied force.

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