Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Fluid growth from gaseous state combined with preceding...
Reexamination Certificate
2004-11-12
2010-02-16
Menz, Douglas M (Department: 2891)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Fluid growth from gaseous state combined with preceding...
C438S960000, C438S962000, C257SE21036, C117S087000, C117S921000, C977S754000, C977S891000
Reexamination Certificate
active
07662706
ABSTRACT:
A method of forming a nanostructure having the form of a tree, comprises a first stage and a second stage. The first stage includes providing one or more catalytic particles on a substrate surface, and growing a first nanowhisker via each catalytic particle. The second stage includes providing, on the periphery of each first nanowhisker, one or more second catalytic particles, and growing, from each second catalytic particle, a second nanowhisker extending transversely from the periphery of the respective first nanowhisker. Further stages may be included to grow one or more further nanowhiskers extending from the nanowhisker(s) of the preceding stage. Heterostructures may be created within the nanowhiskers. Such nanostructures may form the components of a solar cell array or a light emitting flat panel, where the nanowhiskers are formed of a photosensitive material. A neural network may be formed by positioning the first nanowhiskers close together so that adjacent trees contact one another through nanowhiskers grown in a subsequent stage, and heterojunctions within the nanowhiskers create tunnel barriers to current flow.
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Deppert Knut Wilfried
Samuelson Lars Ivar
Foley & Lardner LLP
Menz Douglas M
QuNano AB
Such Matthew W
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