Nanostructure arrays and methods of making same

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer

Reexamination Certificate

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Details

C438S478000, C438S400000, C438S445000, C438S448000, C438S551000, C257SE29001, C257SE51001, C977S700000

Reexamination Certificate

active

07488671

ABSTRACT:
A method of making a nanostructure array including disposing a masking material on a nanoporous template such that a first number of the plurality of nanopores are fully coated while a second number of the plurality of nanopores are not-fully coated by the masking material is provided. The method includes forming the nanostructures within the plurality of nanopores that are not-fully coated by the masking material. A nanostructure array fabricated in accordance to above said method and devices based on the nanostructure array is also provided.

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