Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer
Reexamination Certificate
2006-05-26
2009-02-10
Lindsay, Jr., Walter L (Department: 2812)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
On insulating substrate or layer
C438S478000, C438S400000, C438S445000, C438S448000, C438S551000, C257SE29001, C257SE51001, C977S700000
Reexamination Certificate
active
07488671
ABSTRACT:
A method of making a nanostructure array including disposing a masking material on a nanoporous template such that a first number of the plurality of nanopores are fully coated while a second number of the plurality of nanopores are not-fully coated by the masking material is provided. The method includes forming the nanostructures within the plurality of nanopores that are not-fully coated by the masking material. A nanostructure array fabricated in accordance to above said method and devices based on the nanostructure array is also provided.
REFERENCES:
patent: 6803840 (2004-10-01), Hunt et al.
patent: 2002/0055239 (2002-05-01), Tuominen et al.
patent: 2004/0056271 (2004-03-01), Chen et al.
patent: 2004/0131937 (2004-07-01), Chen et al.
patent: 2004/0144985 (2004-07-01), Zhang et al.
patent: 2004/0265212 (2004-12-01), Varadhan et al.
patent: 2005/0012975 (2005-01-01), George et al.
patent: 2005/0285116 (2005-12-01), Wang
patent: 2006/0275955 (2006-12-01), Ku et al.
Corderman Reed Roeder
Ku Anthony Yu-Chung
General Electric Company
Lindsay, Jr. Walter L
Mustapha Abdulfattah
Yoder Fletcher
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