Nanoscale X-Y-Z translation of nanochannel glass replica-based m

Details Nanoscale X-Y-Z translation of nanochannel glass replica-based m Nanoscale X-Y-Z translation of nanochannel glass replica-based m

1998-03-03

2000-07-11

Whitehead, Jr, Carl

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

438943, 438945, 438947, 216 54, C03C 1500

Patent

active

060872748

ABSTRACT:
The present invention is a process for making complex structures with nanoscale resolution in parallel by placing an NCG replica-based mask (or other suitable mask) in close proximity to a substrate and controlling, with nanoscale accuracy and precision, the relative movement of the mask and substrate while sequentially or concurrently carrying out a patterning process or processes. Another aspect of the invention is a diamond film with submicron and/or nanoscale features, that can be made by the method of the invention.

REFERENCES:
patent: 5234594 (1993-08-01), Tonucci et al.
patent: 5264722 (1993-11-01), Tonucci et al.
patent: 5306661 (1994-04-01), Tonucci et al.
patent: 5332681 (1994-07-01), Tonucci et al.
patent: 5855716 (1999-01-01), Tonucci et al.
Berry, A.D., R. J. Tonucci, M. Fatemi, "Fabrication of GaAs and InAs Wires n Nanochannel Glass", Applied Physics Letters, v69, 2846-2848, Nov. 4, 1996 .

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