Nanoporous silica via combined stream deposition

Details Nanoporous silica via combined stream deposition Nanoporous silica via combined stream deposition

1998-08-27

2000-03-14

Bowers, Charles

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438781, 438782, 438790, 427245, 427246, H01L 21316

Patent

active

060372753

ABSTRACT:
A process for forming a nanoporous dielectric coating on a substrate. The process includes either (i) combining a stream of an alkoxysilane composition with a stream of a base containing catalyst composition to form a combined composition stream; immediately depositing the combined composition stream onto a surface of a substrate and exposing the combined composition to water (in either order or simultaneously); and curing the combined composition; or (ii) combining a stream of an alkoxysilane composition with a stream of water to form a combined composition stream; immediately depositing the combined composition stream onto a surface of a substrate; and curing the combined composition.

REFERENCES:
patent: 4510176 (1985-04-01), Cuthbert
patent: 5001084 (1991-03-01), Kawai
patent: 5094884 (1992-03-01), Hillman
patent: 5315724 (1994-05-01), Tsukune
patent: 5646071 (1997-07-01), Lin
patent: 5658615 (1997-08-01), Hasebe
patent: 5753305 (1998-05-01), Smith
patent: 5817582 (1998-10-01), Maniar

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