Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Patent
1996-11-14
2000-05-16
Dudash, Diana
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
438780, 427 58, 427335, 427337, 427344, 427384, H01L 2100, B05D 304
Patent
active
060637145
ABSTRACT:
This pertains generally to precursors and deposition methods suited to aerogel thin film fabrication of nanoporous dielectrics. A method of forming a nanoporous dielectric on a semiconductor substrate is disclosed. By a method according to the present invention, a precursor sol is applied as a nongelling thin film 14 to a semiconductor substrate 10. This substrate may contain patterned conductors 12, gaps 13, and/or other structures. A portion of the solvent is evaporated from the thin film 14 to produce a reduced thickness film 18. Film 18 is gelled and may be aged. A surface modification agent is introduced to the reaction atmosphere in a vaporish form, e.g., a vapor, mist, aerosol, or similar form. The surface modifier can then diffuse into, condense onto, and/or settle onto the wet gel and then diffuse throughout the thin film. This vaporish introduction of the surface modification agent ensures that there are no strong fluid flows across the wafer that might damage the wet gel. It can also be compatible with standard processing equipment and can potentially be used with other reaction atmosphere controls that reduce premature drying of the gel.
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Ackerman William C.
Jeng Shin-Puu
Johnston Gregory P.
Smith Douglas M.
Barr Michael
Denker David
Dudash Diana
Hoel Carlton H.
Telecky Jr. Frederick J.
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